[liquid crystal display and the manufacturing method thereof]

ABSTRACT

A liquid crystal display device includes two parallel substrates spaced apart, a sealant forming an enclosed space with the two substrates and a liquid crystal layer forming in the enclosed space. After at least a conducting layer and/or an insulating layer of the Thin Film Transistors and the pixel electrodes thereon is deposited on the one substrate, two masks serve to at least cover the conducting layer and/or the insulating layer. As deposition is continued, at least one conducting and/or insulating wall structure with specific pattern on the one substrate is formed. Thus, contamination and degradation of the liquid crystal can be avoided and further the two substrates can be conducted without using conductive material.

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the priority benefit of Taiwanapplication serial no.92116075, filed on Jun. 13, 2003.

BACKGROUND OF INVENTION

[0002] 1. Field of Invention

[0003] This invention relates to a liquid crystal device and themanufacturing method thereof. Moreover, this invention particularlyrelates to a liquid crystal device and manufacturing method forsimultaneously forming conductive and/or insulating walls using ThinFilm Transistor (TFT) Deposition as well as pixel electrode therein.

[0004] 2. Description of Prior Art

[0005] The present liquid crystal device process comprises forming ofThin Film Transistor (TFT), Liquid Crystal Device (LCD) panel, andliquid crystal module. Common TFT structure includes gate metal layer,semiconductor layer (wherein semiconductor layer includes gateinsulating layer, amorphous crystalline layer, and a n+ doping layer),source/drain metal layer, and passivation layer. The forming of TFTprocess includes repeated rinsing, deposition, yellow light exposure,developing, etching, and lift-off. Take gate metal layer for example, asubstrate is rinsed firstly, followed by depositing a metal layer onsubstrate surface, coating photoresist on the metal layer, exposed underlight, developing away the unwanted pattern, etching for desiredpattern, and finally lift off the photoresist to form a gate metallayer. Continue on next mask accordingly.

[0006] The process of forming a LCD panel mainly comprises One Drop Fillprocess, i.e. ODF process, as shown in FIG. 1A. A sealant, anUltraviolet sealant (UV sealant) for example, is applied to a substrateA1 in an enclosed form, and liquid crystal is dropped from a liquidcrystal dispenser to the enclosed area as shown in FIG. 1B. Afterforming a uniform liquid crystal layer A4, take another substrate A2 tobond to substrate A1 that has the liquid crystal layer A4, and continuetoirradiate (ultraviolet light, for example) the sealant A3 so as toadhere the two substrates A1 and A2 together (as shown in FIG. 1C).After an annealing process, the procedure is ultimately done.

[0007] However, the drawback to this technique is, some part of theliquid crystal layer A4 would be exposed to lighting when irradiatingsealant A3 in order to adhere substrates A1 to A2, thus liquid crystalsuffers from degradation.

[0008] Moreover, the liquid crystal layer A4 that contacts with thesealant A3 is possibly contaminated, which also downgrades displayquality.

[0009] In order to avoid contact contamination between the liquidcrystal A4 and the sealant A3, the US patent U.S. Pat. No. 6,219,126discloses a method using coating or lithography techniques for buildingan enclosed liquid crystal wall structure that is made of acrylic resinor silicone. Nevertheless, the structure requires excess materials andsteps that complicate the process.

[0010] JP patent JP2001-222017 as well discloses that in order toimplement liquid crystal wall equivalency, a pigment-layer of depositedCF (color filter) substrate is used (as shown in FIG. 3). Yet in orderto avoid liquid crystal degradation caused by ultraviolet lighting,masking effect has to be tied with pigment color as well asconcentration control thereof.

[0011] Another prior art as shown in FIG. 4, a liquid crystal devicecomprises a TFT substrate B1 and a Color Filter (CF) substrate B2 inparallel with a liquid crystal layer B3 therebetween. When TFT substrateB1 that is voltage driven has a potential difference from CF substrateB2, the transmittance of the liquid crystal molecules is manipulated byvoltage difference thereof. Generally, the voltage applied to CFsubstrate B2 is fixed as a common voltage Vcom so as to vary voltage Vapplying to pixel electrode B11 on TFT (not shown) to generate apotential difference ΔV=V−Vcom. However, there is no terminal to CFsubstrate B2, Vcom voltage has to be provided by TFT.

[0012] For instance, usually Vcom voltage on TFT substrate B1 istransmitted to CF substrate B2 through conductive adhesive B4, however,it has to be done outside of sealant B5 by applying excess conductiveadhesive B4 with an excess device. Obviously there is excess materialcost and as well as the process has to be done after sealant ishardened.

[0013] In addition, as disclosed in US patent U.S. Pat. No. 6,404,480, aconductive spacer B6 is used to support and conduct TFT substrate B1 andCF substrate B2 as well as to be mixed with sealant B5 (as shown in FIG.5), so as to perform conducting Vcom voltage. Yet conductive material isrequired and the process difficulty is raised and all sealant B5 ispossibly not hardened.

SUMMARY OF INVENTION

[0014] In order to eliminate those drawbacks of prior art technologies,continuous efforts of researches and experiments were made so as todisclose this present invention.

[0015] Accordingly, one object of this present invention is to provide aliquid crystal device and its manufacturing method so as to simultaneousforming liquid crystal walls using deposit TFT process.

[0016] As embodied and broadly described herein, the invention providesa liquid crystal device (LCD), wherein the LCD includes a top and abottom substrate in parallel, a sealant with which substrates thereofforming an enclosed space, and a liquid crystal layer forming within theenclosed space. When forming TFT and pixel electrode on inner surface ofone of the substrates, a mask at least covers the deposited insulatinglayer and/or conductive layer in either step that forms the depositedinsulating layer and/or conductive layer. Take another larger frame maskto simultaneously superimpose on one of the substrates to form a framingspace in between the two masks, whereas the mask material is chosendepending on the insulating layer and the conductive layer, that is, aconductive material and insulating material respectively. Continuedeposition in between the frame shape space so that deposition layer isformed. Remove the two masks after a predetermined period of time fordeposition to form an enclosed liquid crystal wall so as to avoidcontamination and/or degradation of liquid crystal.

[0017] Another object of this present invention is to provide liquidcrystal device and manufacturing method exempted from conductiveadhesive or conductive spacer.

[0018] To achieve the forgoing object, this present invention isimplemented as follows.

[0019] A Liquid Crystal Device (LCD) is provided, wherein the LCDincludes a top and a bottom substrate configured in parallel, a sealantthat forms an enclosed space with the two substrates, and a liquidcrystal layer formed within the enclosed space. In either step offorming the conductive layer of TFT and pixel electrode on the innersurface of one of the substrates. With a certain patternon an insulatingmask according to the circuit design, the mask is removed afterdeposition is continued in a predetermined period of time. A conductivewall pattern is formed on inner surface of one of the substrates inorder to conduct to the other substrate; or.

[0020] A liquid crystal device is provided, wherein the LCD having a topand a bottom substrate in parallel, a sealant that forms an enclosedspace with the two substrates, and a liquid crystal layer forming withinthe enclosed space. In either step of forming the conductive layer ofTFT and pixel electrode on the inner surface of one of the substrates,to cover at least the deposited conductive layer with a mask, and applyanother larger frame mask on the substrate simultaneously, so that frameshape spacing is formed in between the two masks. Notice that thematerial of the masks is insulating. Continue the deposition process inbetween the frame spacing, an enclosed conductive wall is formed afterremoval of the two masks in a predetermined period of time; or.

[0021] A liquid crystal device is provided, wherein the LCD comprises atop and a bottom substrates in parallel, a sealant forming an enclosedspace with the two substrates, and a liquid crystal layer formed withinthe enclosed space. In either step of forming the insulating layer ofTFT and pixel electrode on inner surface of one of the substrates toapply one mask to at least cover the deposited insulating layer, andapply another larger frame mask to the substrate simultaneously so as toform a frame shape mask in between the two masks. Continue thedeposition; an enclosed insulating wall is formed in between the twomasks after removal of the two masks in a predetermined period of timeto apply a mask having certain circuit pattern that is insulating to goon deposition, a conductive wall is built on the inner surface of one ofthe substrates after removal of the mask in a predetermined period oftime, so as to conduct to another substrate; or.

[0022] A liquid crystal device is provided, wherein the LCD comprises atop and a bottom substrate in parallel, a sealant that forms an enclosedspace with the two substrates, and liquid crystal layer within theenclosed space. In either step of forming the conductive layer of TFTand pixel electrode on inner surface of one of the substrates, A mask isapplied to at least cover the deposited layer while another larger framemask is superimposed simultaneously on the substrate to form framespacing in between the two masks. Notice that the materials of the masksare insulating. Continue the deposition; an enclosed conductive wall isdeposited in between the frame spacing after removal of the two masks ina predetermined period of time. Another deposition is applied to form aconductive layer on the insulating layer. A certain circuit patterned onan insulating mask with is applied to continue deposition, so as toobtain a conductive wall pattern on inner surface of the substrate forconducting to the other substrate after removal of the mask after apredetermined period of ti me.

[0023] It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary, andare intended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF DRAWINGS

[0024] The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

[0025]FIGS. 1A to 1C illustrate a first set of diagrams of conventionalliquid crystal dropping process.

[0026]FIG. 2 illustrates a second set of diagrams of conventional liquidcrystal dropping process.

[0027]FIG. 3 illustrates a first cross-sectional diagram of aconventional Liquid Crystal Display (LCD) panel.

[0028]FIG. 4 illustrates a second cross-sectional diagram of aconventional LCD panel.

[0029]FIG. 5 illustrates a third cross-sectional diagram of aconventional LCD panel.

[0030]FIGS. 6A to 6F illustrate a first set of diagrams of formation ofLCD panel according to first preferred embodiment of the presentinvention.

[0031]FIGS. 7A to 7F illustrate a second set of diagrams of formation ofLCD panel according to second preferred embodiment of the presentinvention.

[0032]FIGS. 8A to 8F illustrate a third set of diagrams of formation ofLCD panel according to third preferred embodiment of the presentinvention.

[0033]FIGS. 9A to 9F illustrate a fourth set of diagrams of formation ofLCD panel according to fourth preferred embodiment of the presentinvention.

[0034]FIGS. 10A to 10F illustrate a fifth set of diagrams of formationof LCD panel according to fifth preferred embodiment of the presentinvention.

[0035]FIGS. 11A to 11F illustrate a sixth set of diagrams of formationof LCD panel according to sixth preferred embodiment of the presentinvention.

[0036]FIGS. 12A to 12H illustrate seventh set of diagrams of formationof LCD panel according to seventh preferred embodiment of the presentinvention.

[0037]FIGS. 13A to 13H illustrate eighth set of diagrams of formation ofLCD panel according to eight preferred embodiment of the presentinvention.

[0038]FIGS. 14A to 14C illustrate another set of diagrams of formationof LCD according to one preferred embodiment of the present invention.

DETAILED DESCRIPTION

[0039] First Embodiment of the Present Invention: As shown in the FIGs.from 6A to 6F, a TFT formation process is performed on a substrate 11.To be simplified, only single TFT is illustrated in this and the otherpreferred embodiments in this invention. After depositing the gate metallayer 17, manipulate the mask 13 to at least cover the gate metal layer17, and as well superimpose another larger frame mask 14 on thesubstrate 11 simultaneously. A frame spacing 15 (as shown in top viewdiagram in FIG. 6A) is formed in between the two masks, 13 and 14. Thematerials of masks 13 and 14 are those not prone to bond to metal, suchas insulator, or processed material so that it does not prone to bond tometal. Notice that manipulation of masks 13 and 14 is automated.

[0040] As deposition is continued within the frame spacing 15 (as shownin FIG. 6B), an enclosed metal wall 16 is built after removal of the twomasks 13 and 14 in a predetermined period of time. To accomplish theforming of the TFT (as shown in FIG. 6C), liquid crystal is dropped tothe metal wall 16, and to enable to form a uniform liquid crystal layer18. An ultraviolet sealant 19 is coated on periphery of metal wall 16(as shown in a top view in FIG. 6D and a cross-sectional view in FIG.6E) in order to be pre-sealed to another substrate 12. Then use UV lighthardens the UV sealant 19 so that substrates 11 and 12 are bonded. Anannealing process is applied so as to accomplish a liquid crystaldisplay panel (as illustrated in FIG. 6F).

[0041] The metal wall 16 is bonded to both the top and bottom substrates11 and 12, thus the liquid crystal layer 18 has no contact to UV sealant19 so as to avoid contamination of liquid crystal that causesdegradation of display quality.

[0042] Moreover, when UV light irradiates the UV sealant 19 to bondsubstrates 11 and 12 together, the formation of enclosed metal wall 16entirely blocks UV light transmitting from either side of the two bondedsubstrates 11 and 12, thus degradation of liquid crystal is avoided.

[0043] Furthermore, the metal wall 16 formed on the substrate 11contacts another substrate 12 so as to conduct substrate 11 (i.e. TFTsubstrate) to substrate 12 (i.e. Color Filter, CF substrate), as well assupports the structure, where conductive material, e.g. conductingadhesive or conductive spacer, is not necessary.

[0044] Second Preferred Embodiment: FIGS. 7A to 7F illustrate theformation of TFT on the surface of a substrate 21. A source/drain metallayer 27 is deposited following by manipulating a mask 23 to at leastcover the source/drain metal layer 27. Another larger frame mask 24simultaneously superimposes on substrate 21 to form a frame spacing 25in between the two masks 23 and 24 (as illustrated in a top view in FIG.7A). Notice that the masks 23 and 24 are made of materials that do notprone to bond to metal, insulator for example, or made of processedmaterial that does not prone to bond to metal. Furthermore, themanipulation of masks 23 and 24 is automated.

[0045] Deposition is continued in the frame spacing 25 (as illustratedin FIG. 7B) and an enclosed metal wall 26 is formed after removal of thetwo masks 23 and 24 so as to complete the TFT formation process (asillustrated in FIG. 7C). Dropping liquid crystal to the metal wall 26and to enable to form a uniform liquid crystal layer 28 is followed bycoating UV sealant 29 along periphery of the metal wall 26. (asillustrated in a top view diagram of FIG. 7D and a cross-sectional viewdiagram of FIG. 7E) Another substrate 22 is then adhered and processedthe UV light exposure so as to take UV sealant 29 into effect, i.e.bonding substrates 21 and 22 together. The last process step isannealing, thereof a liquid crystal display panel is completed (asillustrated in FIG. 7F).

[0046] For the metal wall 26 is bonded to the top and the bottomsubstrates 21 and 22, liquid crystal layer 28 has no contact with UVsealant 29 so that contamination of liquid crystal and degradation ofdisplay quality are avoided.

[0047] In addition, while irradiating UV light to harden UV sealant 29in order to bond substrates 21 and 22, UV light is completely blocked bythe bonded substrates 21 and 22 from any side, thus degradation ofliquid crystal is avoided.

[0048] Moreover, the metal wall 26 formed on substrate 21 contactsanother substrate 21 so as to simultaneously conduct substrate (TFTsubstrate) to substrate 22 (CF substrate) as well as supports thestructure, where conducting adhesive or conducting spacer are notnecessary.

[0049] Third Preferred Embodiment: Referring to FIGS. 8A to 8F, a TFTforming process is performed on a substrate 31. After depositing pixelelectrode layer (Indium-Tin Oxide, ITO, for example), manipulate a mask33 to at least cover pixel electrode layer 37. Manipulating a largerframe mask 34 to simultaneously superimpose on substrate 31, so as toform a frame spacing 35 between the two masks 33 and 34 (as illustratedin top view diagram in FIG. 8A). Notice that materials constitutingmasks 33 and 34 are those not prone to bond to metal, such as insulator,or processed material that does not prone to bond to metal. Also noticethat manipulation of masks 33 and 34 is automated.

[0050] As deposition is continued, it is performed within the framespacing 35. As the two masks 33 and 34 is removed in a predeterminedperiod of time, an enclosed metal wall 36 is formed and to continue TFTformation process thereof (as illustrated in FIG. 8C). Liquid crystal isdropped in metal wall 36 and to enable to form an uniform liquid crystallayer 38, UV sealant 39 is further coated along metal wall 36 (asillustrated in top view diagram in FIG. 8D and cross-sectional diagramin FIG. 8E). To pre-seal with another substrate 32, and UV sealant 39 ishardened by UV irradiation in order to bond substrates 31 and 32together, and an annealing step is performed therein to complete aliquid crystal display panel (as illustrated in FIG. 8F).

[0051] Since metal wall 36 is bonded to substrates 31 and 32, liquidcrystal layer 38 is blocked by UV sealant so as to avoid contaminationof liquid crystal that causes degradation of display quality.

[0052] Furthermore, the formation of the metal wall 36 on the substrate31 is to contact another substrate 32 so as to simultaneously conductthe substrate 31 (i.e. TFT substrate) to the substrate 32 (i.e. CFsubstrate) as well as to support the structure without conductiveadhesive or conductive spacer.

[0053] The Fourth Preferred Embodiment: Referring to the FIGS. 9A to 9F,TFT formation process is implemented on substrate 41 therein. Assemiconductor layer 47 is deposited, manipulate a mask 43 in order to atleast cover the semiconductor layer 47. Also manipulate another largerframe mask 44 to simultaneously superimpose on the substrate 41. A framespacing 45 is thus formed between the two masks 43 and 44 (asillustrated in the top view diagram in FIG. 9A). Notice that thematerial to the masks 43 and 44 does not prone to bond to insulator,such as conductive material, or processed material that does not proneto bond to insulator. Also notice that manipulation of masks 43 and 44is automated.

[0054] As deposition is continued, deposition is performed within theframe spacing 45 (as illustrated in FIG. 9B). An enclosed insulatingwall 46 is built after removal of the two masks 43 and 44 in apredetermined period of time. To complete TFT formation process (asillustrated in FIG. 9C), liquid crystal is dropped to the insulatingwall 46, and to enable to form a uniform liquid crystal layer 48. UVsealant 49 is coated along the periphery of the insulating wall 46 (asshown in a top view diagram of FIG. 9D and a cross-sectional viewdiagram of FIG. 9E) so as to pre-seal to another substrate 42. Then UVtype sealant is hardened by UV irradiation so as to bond substrates 41and 42 together. An annealing process is exerted ultimately and thus aliquid crystal display panel is formed thereof (as illustrated in FIG.9F).

[0055] Since insulating wall 46 is bonded to the substrates 41 and 42,the liquid crystal layer 48 has no contact to the UV sealant 49, liquidcrystal is free from contamination that degrades the display quality.

[0056] Furthermore, the insulating layer 46 formed on the substrate 41manages to support the structure similar to conventional spacer therein.

[0057] The Fifth Preferred Embodiment: Referring to FIGS. 10A to 10F,TFT formation process is performing on substrate 51 therein. After apassivation layer 57 is deposited, to manipulate a mask 53 in order toat least cover the passivation layer 57, and also manipulate anotherlager frame mask 54 to simultaneously superimpose on the substrate 51. Aframe spacing 55 is thus formed between the two masks 53 and 54 (asillustrated in top view diagram FIG. 10A). Notice that material of masks53 and 54 does not prone to bond to insulator, such as conductivematerial, or processed material so as to not prone to bond to insulator.Also notice that manipulation of masks 53 and 54 is automated.

[0058] As deposition is continued, deposition is performed in the framespacing 55 (as illustrated in FIG. 10B). After removal of the two masks53 and 54 in a predetermined period of time, an enclosed insulating wall56 is built therein. In order to complete TFT formation process (asillustrated in FIG. 10C), liquid crystal is dropped to the insulatingwall 56 and to enable to form a uniform liquid crystal layer 58. UVsealant 59 is coated along periphery of the insulating wall 56 (asillustrated in the top view diagram of FIG. 10D and cross-sectionaldiagram of FIG. 10E) so as to pre-seal to another substrate 52. Then UVsealant is irradiated by UV light so that substrates 51 and 52 arebonded together. An annealing step is ultimately implemented so as tocomplete a liquid crystal display panel (as illustrated in FIG. 10F).

[0059] Since the insulating wall 56 is bonded to the substrates 51 and52, the liquid crystal layer 58 has no contact to the UV sealant 59 soas to avoid contamination that degrades display quality.

[0060] Furthermore, the insulating wall 56 formed on the substrate 51manages to support the structure similar to a conventional spacer.

[0061] The Sixth Preferred Embodiment: Referring to the FIGS. 11A to11F, TFT formation process is performed on a substrate 61. After aconductive layer 67 (gate metal layer, drain/source metal layer or pixelelectrode layer, wherein gate metal layer is introduced as an example)is deposited, manipulate a mask 63 that patterned with a specificcircuit design is superimposed on the substrate 51. Notice that materialof mask 63 does not prone to bond to metal, such as insulator, orprocessed material that does not prone to bond to metal. Also noticethat manipulation of the mask 63 is automated (as illustrated in FIG.11B).

[0062] As deposition is continued, after removal of the mask 63 in apredetermined period of time, a pattern of conductive wall 64 is formedtherein. In order to complete TFT formation process (as illustrated inFIG. 1C), UV sealant 66 is coated along periphery of substrate 61, andliquid crystal is dropped to the conductive wall 64 and to enable toform an uniform liquid crystal layer 65. (as illustrated in top viewdiagram of FIG. 11D and cross-sectional view diagram of FIG. 11E). Topre-seal another substrate 62, then UV sealant is exposed to UV light soas to be hardened as well as bonding substrates 61 and 62 together.Ultimately an annealing process is performed to complete a liquidcrystal display panel (as illustrated in FIG. 11F).

[0063] Notice that conductive material (e.g. conductive adhesive orconductive spacer) is not required, for the conductive wall pattern 64that is formed on substrate 61 manages to conduct from substrate 61(i.e. TFT substrate) to another substrate 62 (i.e. CF substrate) as wellas manages to support the structure.

[0064] The Seventh Preferred Embodiment: Referring to FIGS. 12A to 12H,process of TFT formation process is performed on a substrate 71. Afterinsulating layer 711 (semiconductor layer or passivation layer,semiconductor layer is exemplary herein) is deposited, manipulate a mask73 so as to at least cover the insulating layer 711, as well asmanipulate a larger frame mask 74 to simultaneously superimpose on thesubstrate 71. Thus a frame spacing 75 between the two masks 73 and 74 isimplemented therein (as illustrated in top view diagram in FIG. 12A).The masks 73 and 74 are not prone to bond with insulating materials, forexample, a conductive material, or a processed material that does notbond with insulating materials. Notice thattemptemp the manipulation ofmasks 73 and 74 is automated.

[0065] As deposition is continued, as well as depositing in the framespacing 75 (as illustrated in FIG. 12B), an enclosed insulating wall 76is formed after removal of the two masks 73 and 74 in a predeterminedperiod of time. As a conductive layer (a source/drain metal layer orpixel electrode layer, for example) is deposited thereafter, manipulatea specific patterned mask 77 (as illustrated in top view diagram FIG.12C) while deposition is proceeding (as illustrated in FIG. 12D), aspecific conducting wall pattern 761 is formed on the substrate 71 afterremoval of the mask 77 in a predetermined of time. To complete processof TFT formation (as illustrated in FIG. 12E), liquid crystal is droppedto the insulating wall 76 and to enable to form a uniform liquid crystallayer 78. An UV sealant 79 is coated along periphery of the insulatingwall 76 (as illustrated in top view diagram in FIG. 12F andcross-sectional view diagram in FIG. 12G). To pre-seal another substrate72, then UV sealant 79 is exposed to UV light so as to be hardened aswell as bonding substrate 71 and 72 together. Lastly an annealingprocess is performed to complete a liquid crystal display panel (asillustrated in FIG. 12H).

[0066] Since that the insulating wall 75 is bonded to the substrates 71and 72, the liquid crystal layer 78 has no contact to UV sealant 79 soas to avoid contamination of liquid crystal and degradation of displayquality.

[0067] Also that conductive material (e.g. conductive adhesive orconductive spacer) is not necessary, for the conductive wall patternthat is formed on substrate 71 manages to conduct from substrate 71(i.e. TFT substrate) to another substrate 72 (i.e. CF substrate) as wellas manages to support the structure.

[0068] The Eight Preferred Embodiment: Referring to FIGS. 13A to 13H,process of TFT formation process is performed on a substrate 81. Afterconductive layer 811 (gate metal layer or source/drain metal layer orpixel electrode layer, where gate metal layer is exemplary herein) isdeposited, manipulate a mask 83 so as to at least cover the conductivelayer 811. Also manipulate a larger frame mask 84 to simultaneouslysuperimpose on the substrate 81, thus a frame spacing 85 between the twomasks 83 and 84 is formed therein (as illustrated in top view diagram inFIG. 13A). The masks 83 and 84 are not prone to bond with conductivematerials, for example, an insulating material, or a processed materialthat does not to bond with conductive materials. Notice that themanipulation of masks 83 and 84 is automated.

[0069] As deposition is continued, as well as depositing within theframe spacing 85 (as illustrated in FIG. 13B), an enclosed insulatingwall 86 is built after removal of the two masks 83 and 84 in apredetermined period of time. As an insulating layer (a semiconductorlayer or a passivation layer, for example) is deposited thereafter, tomanipulate a specific patterned mask 87 (as illustrated in top viewdiagram FIG. 13C) while deposition is proceeding (as illustrated in FIG.13D), a specific conducting wall pattern 861 is formed on the substrate81 after removal of the mask 87 in a predetermined of time. To completeprocess of TFT formation (as illustrated in FIG. 13E), liquid crystal isdropped and to enable to form a uniform liquid crystal layer 88. An UVsealant 89 is coated along periphery of the conductive wall 85 (asillustrated in top view diagram in FIG. 13F and cross-sectional viewdiagram in FIG. 13G). To pre-seal another substrate 82, then UV sealant89 is exposed to UV light so as to be hardened as well as bondingsubstrate 81 and 82 together. Lastly an annealing process is executed tocomplete a liquid crystal display panel (as illustrated in FIG. 13H).

[0070] For the conductive wall 86 are bonded to the substrates 81 and82, the liquid crystal layer 88 has no contact to the UV sealant 89 soas to avoid liquid crystal from contamination as well as degradation ofdisplay quality.

[0071] In addition, UV sealant 89 being exposed to UV light forhardening as well as for bonding the substrates 81 and 82, UV light isentirely blocked from any side of the substrates 81 and 82 for theenclosed conductive wall 86. (Gate metal layer or source/drain metallayer, for example, yet providing pixel electrode layer being ITO,merely conducting effect takes place instead of masking effect for it islight transmissive.) Thus degradation of liquid crystal is avoided asdesired.

[0072] Also notice that conductive material (e.g. conductive adhesive orconductive spacer) is not required, for the conductive wall patternformed on substrate 81 manages to conduct voltage from substrate 81(i.e. TFT substrate) to another substrate 82 (i.e. CF substrate) as wellas manages to support the structure.

[0073] The Ninth Preferred Embodiment: According to the foregoingembodiments and referring to the FIGS. 14A to 14C, UV sealant 93optionally coats one substrate 92 such that the UV sealant 93 is locatedoutside of the formed conductive/insulating wall 94 (as illustrated inFIG. 14A) as being bonded to another substrate 91. That is,corresponding to TFT substrate 91. Liquid crystal is then dropped to theconductive/insulating wall 94 and to enable to form a uniform liquidcrystal wall 95 (as illustrated in FIG. 14B). To pre-seal the twosubstrates 91 and 92, the substrate 92 and the substrate 91 are exposedto UV light so as to harden the UV sealant 93 as well as bonding the twosubstrates together. A last annealing process is performed and a liquidcrystal display panel is thus completed thereby (as illustrated in FIG.14C).

[0074] The shape and design of a mask (such as a photomask) described inthis invention undoubtedly serves to be exemplary and is not necessarilylimited to those in foregoing preferred embodiments. Manipulation ofmasks is automated by any automation equipment. The patterns on a maskserve to this design upon circuitry requirement, whereas the sealant(photo-sealant, e.g. UV sealant, IR sealant, or LASER sealant) alsomanages to bond to or to form space along with conductive/insulatingwall. The formation of the conductive/insulating wall cooperates withany of the deposition steps that form TFT or pixel electrode, i.e. toform at least a single layer/wall (i.e. repeated formation of two ormore layers/walls of conductive/insulating structure is possiblyintroduced). The forming steps, orders and materials arent limited topresent invention, for example, to form a conductive/insulating layer ona conductive/insulating layer should be take as one step of forming aconductive/insulating layer, the conductive layer isnt limited to metal,the TFT forming process is not limited to specific masks process and soon.

[0075] The advantages of the present invention.

[0076] (1) To form the enclosed wall while to form either layer of TFTon the substrate so as to save additional cost of sealant formingprocess and material.

[0077] (2) Enabling to support and conduct without using additionalconductive material such as conductive adhesive, conductive spacer andso on.

[0078] (3) To prevent the liquid crystal from deterioration caused byirradiation of UV light.

[0079] (4) To prevent the liquid crystal from contamination caused bycontact with UV sealant.

[0080] (5) The liquid crystal can be formed on either one of the twosubstrates.

[0081] It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncovers modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1. A liquid crystal display, comprising: two substrates, being spacedapart in parallel; an enclosed wall structure, provided in between saidtwo substrates, wherein the enclosed wall structure and said twosubstrates form a first enclosed space; a sealant, formed outside saidenclosed wall structure between said two substrates, wherein saidsealant and said two substrates form a second enclosed space; a liquidcrystal layer, formed in said first enclosed space between said twosubstrates; and at least a thin film transistor, being formed in saidfirst enclosed space on one of said two substrates.
 2. The liquidcrystal display as recited in claim 1, wherein said enclosed wallstructure comprises a conductive wall.
 3. The liquid crystal display asrecited in claim 1, wherein said conductive wall serves to conduct saidtwo substrates.
 4. The liquid crystal display as recited in claim 1,wherein a plurality of conductive walls for conducting said twosubstrates are provided on said substrate that has said thing filmtransistors.
 5. The liquid crystal display as recited in claim 1,wherein said enclosed wall structure comprises an insulating wall. 6.The liquid crystal display as recited in claim 1, wherein said enclosedwall and said sealant are bonded.
 7. The liquid crystal display asrecited in claim 1, wherein said enclosed wall and said sealant arespaced apart.
 8. The liquid crystal display as recited in claim 1,wherein said sealant comprises a light hardening adhesive.
 9. A methodof manufacturing a liquid crystal display, which comprises: providing afirst substrate; forming a first conductive layer on said firstsubstrate; forming a first insulating layer on said first conductivelayer; forming a second conductive layer on said first insulating layer,wherein between forming said first conductive layer on said firstsubstrate and forming said second conductive layer on said firstinsulating layer and after forming said second conductive layer on saidfirst insulating layer further comprises forming an enclosed wall onperiphery of surface of said first substrate; providing a secondsubstrate; forming a sealant on either a surface of said first substrateor a surface of said second substrate, wherein said sealant is locatedrelatively outside said enclosed wall; bonding said first substrate andsaid second substrate together; and irradiating said sealant;
 10. Themethod of manufacturing a liquid crystal display as recited in claim 9,further comprising a plurality of conductive walls that are formed onsaid first substrate so as to conduct to said second substrate.
 11. Themethod of manufacturing a liquid crystal display as recited in claim 9,wherein the step of forming said enclosed wall on periphery of saidfirst substrate surface further comprise: controlling a first mask to atleast cover said conductive layers and said insulating layers that areformed; controlling a second mask; superimposing said first mask andsaid second mask on said first substrate; continuing deposition; andremoving said first mask and said second mask in order to form saidenclosed wall on surface periphery of said first substrate.
 12. Themethod of manufacturing a liquid crystal display as recited in claim 11,wherein said first mask configures patterns so as to from said pluralityof conductive walls on said first substrate to conduct to said secondsubstrate.
 13. The method of manufacturing a liquid crystal display asrecited in claim 11, wherein a third mask that is patterned is furthercontrolled to perform conductive layer deposition in order to form saidplurality of conductive walls on said first substrate so as to conductto said second substrate.
 14. The method of manufacturing a liquidcrystal display as recited in claim 9, wherein the step of forming saidenclosed wall on surface periphery of said first substrate is performedafter the step of forming said first conductive layer on said firstsubstrate and before the step of forming said first insulating layer onsaid first conductive layer, and said enclosed wall that comprises aconductive wall which forms an enclosed space when bonded to said firstsubstrate and said second substrate as well as conducts to said secondsubstrate upon contact.
 15. The method of manufacturing a liquid crystaldisplay as recited in claim 9, wherein the step of forming said enclosedwall on surface periphery of said first substrate is performed after thestep of forming said first insulating layer on said first conductivelayer and before the step of forming said second conductive layer onsaid first insulating layer, and said enclosed wall comprises aninsulating wall which forms an enclosed space when bonded to said firstsubstrate and said second substrate.
 16. The method of manufacturing aliquid crystal display as recited in claim 9, wherein the step offorming said enclosed wall on surface periphery of said first substrateis performed after the step of forming said second conductive layer onsaid first insulating layer, and said enclosed wall comprises aconductive wall which forms an enclosed space when bonded to said firstsubstrate and said second substrate as well as conducts to said secondsubstrate upon contact.
 17. The method of manufacturing a liquid crystaldisplay as recited in claim 9, further comprising a step of forming asecond insulating layer on said second conductive layer and forming saidenclosed wall on surface periphery of said first substrate, wherein saidstep is performed after the step of forming said first conductive layeron said first substrate and before or after the step of forming saidsecond insulating layer on said second conducting layer.
 18. The methodof manufacturing a liquid crystal display as recited in claim 17,wherein the step of forming the enclosed wall on surface periphery ofthe first substrate is performed after the step of forming said secondinsulating layer on said second conductive layer, and said enclosed wallcomprises an insulating wall which forms an enclosed space when bondedto said first substrate and said second substrate.
 19. The method ofmanufacturing a liquid crystal display as recited in claim 17, furthercomprising a step of forming a third conductive layer on said secondinsulating layer and forming said enclosed wall on surface periphery ofsaid first substrate, wherein said step is performed after the step offorming said first conductive layer on said first substrate and beforeor after the step of forming said third conductive layer on said secondinsulating layer.
 20. The method of manufacturing a liquid crystaldisplay as recited in claim 19, wherein the step of forming saidenclosed wall on surface periphery of said first substrate is performedafter the step of forming said third conductive layer on said secondinsulating layer, and said enclosed wall comprises a conductive wallwhich forms an enclosed space when bonded to said first substrate andsaid second substrate as well as conducts to said second substrates uponcontact.
 21. A method of manufacturing a liquid crystal display, whichcomprises: providing a first substrate; forming a first conductive layeron said first substrate; forming a first insulating layer on said firstconductive layer; forming a second conductive layer on said firstinsulating layer, wherein between forming said first conductive layer onsaid first substrate and forming said second conductive layer on saidfirst insulating layer as well as after forming said second conductivelayer on said first insulating layer, further comprises forming aplurality of conductive walls on surface of said first substrate;providing a second substrate; forming a sealant on either surface ofsaid first substrate or surface of said second substrate; forming aliquid crystal layer on one of said first substrate and second substratewithin said sealant; bonding said first substrate and said secondsubstrate together; and irradiating said sealant.
 22. The method ofmanufacturing a liquid crystal display as recited in claim 21, whereinforming said conductive walls on said first substrate further comprises:controlling a mask to at least cover said conductive layers and saidinsulating layers that are formed; continuing deposition; and removingthe mask, so as to form said conductive walls on said first substrate.23. The method of manufacturing a liquid crystal display as recited inclaim 21, wherein the step of forming said conductive walls on saidfirst substrate is performed after the step of forming said firstconductive layer on said first substrate and before the step of formingsaid first insulating layer on said first conductive layer as well asconducts to said second substrate upon contact.
 24. The method ofmanufacturing a liquid crystal display as recited in claim 21, whereinthe step of forming said conducting walls on said first substrate isperformed after the step of forming said second conductive layer on saidfirst insulting layer as well as conducts to said second substrate uponcontact.
 25. The method of manufacturing a liquid crystal display asrecited in claim 21, further comprising the step of forming a secondinsulating layer on said second conductive layer.
 26. The method ofmanufacturing a liquid crystal display as recited in claim 25, furthercomprising a step of forming a third conductive layer on said secondinsulating layer and forming said enclosed wall on surface periphery ofsaid first substrate, wherein said step is performed after the step offorming said first conductive layer on said first substrate and beforeor after the step of forming said third conductive layer on said secondinsulating layer.
 27. The method of manufacturing a liquid crystaldisplay as recited in claim 26, wherein the step of forming saidconductive walls on said first substrate is performed after the step offorming said third conductive layer and said second insulating layer aswell as conducts to said second substrate upon contact.